Russian Academy of Sciences

Landau Institute for Theoretical Physics

Leonid A. Falkovsky

Leading researcher

Doctor of science

Email:

Publications

    1. A.F. Andreev, A.I. Buzdin, A.A. Varlamov, Yu.Kh. Vekilov, Yu.M. Gal’perin, I.E. Dzyaloshinskii, Yu.M. Kagan, D.V. Livanov, L.P. Pitaevskii, E.I. Rashba, L.A. Fal’kovskii, D.E. Khmel’nitskii, Pamyati Alekseya Alekseevicha Abrikosova, Uspekhi fiz. nauk, 187(6), 687-688 (2017) [A.F. Andreev, A.I. Buzdin, A.A. Varlamov, Yu.Kh. Vekilov, Yu.M. Galperin, I.E. Dzyaloshinskii, Yu.M. Kagan, D.V. Livanov, L.P. Pitaevskii, E.I. Rashba, L.A. Falkovsky, D.E. Khmel’nitskii, In memory of Aleksei Alekseevich Abrikosov, Phys. Usp. 60(6) (2017)].
    2. L.A. Falkovsky, Peierls distortion and electron bands in phosphorus allotropes, Pis’ma v ZhETF, 103 (2), 113-118 (2016) [JETP Letters, 103(2), 106-111 (2016)], WoS: 000374066200006, Scopus: 2-s2.0-84962832710.
    3. L.A. Falkovsky, Effect of electron-phonon interactions on Raman line at ferromagnetic ordering, ZhETF, 146(3), 657-662 (2014) [JETP 119(3), 579-583 (2014)]; arXiv:1403.5736, WoS: 000344179300026, Scopus: 2-s2.0-84909642475.
    4. L.A. Fal’kovskii, Teoriya Lifshitsa–Kosevicha i kulonovskoe vzaimodeistvie v grafene, Fizika nizkikh temperatur, 40(4), 439-443 (2014) [L.A. Falkovsky, The Lifshitz-Kosevich theory and Coulomb interaction in graphene, Low Temp. Phys., 40(4), 339-343 (2014)], WoS: 000336084400011, Scopus: 2-s2.0-84929583288.
    5. L.A. Fal’kovskii, Kulonovskoe vzaimodeistvie i elektronnyi vklad v termodinamiku grafena, Trudy XVIII Mezhdunarodnogo simpoziuma «Nanofizika i nanoelektronika, Nizhnii Novgorod, 10-14 marta 2014, Tom 1, 103-104 (2014).
    6. L.A. Falkovsky, Structure and electron bands of phosphorus allotropes, arXiv:1406.7616.
    7. L.A. Falkovsky, Influence of ferromagnetic ordering on Raman scattering in CoS2, Phys. Rev. B 88, 155135 (2013) [5 pages]; arXiv:1308.3571, WoS: 000326273000001, Scopus: 2-s2.0-84887122051.
    8. L.A. Falkovsky, Magneto-optics of monolayer and bilayer graphene, Pis’ma v ZhETF, 97 (7), 496-505 (2013) [JETP Lett., 97(7), 429-438 (2013)]; arXiv:1303.5214, WoS: 000320475100011, Scopus: 2-s2.0-84879131237.
    9. L.A. Falkovsky, Thermodynamics of electron-hole liquids in graphene, Pis’ma v ZhETF, 98 (3), 183-186 (2013) [JETP Lett., 98(3), 161-164 (2013)]; arXiv:1304.3885, WoS: 000325631800008, Scopus: 2-s2.0-84885600392.
    10. A.Yu. Ozerin, L.A. Falkovsky, Berry phase, semiclassical quantization, and Landau levels, Phys. Rev. B 85, 205143 (2012) [5 pages]; arXiv:1203.0157, WoS: 000304526800008, Scopus: 2-s2.0-84861801538.
    11. L.A. Fal’kovskii, Dinamicheskie svoistva grafena, ZhETF, 142(3), 560-573 (2012) [L.A. Falkovsky, Dynamic properties of graphene, JETP 115(3), 496-508 (2012)], WoS: 000310020700015, Scopus: 2-s2.0-84870900060.
    12. L.A. Falkovsky, Quantum magneto-optics of graphite family, ZhETF, 142(6), 1309-1323 (2012) [JETP 115(6), 1151-1164 (2012)]; arXiv:1205.4952, WoS: 000313068000025, Scopus: 2-s2.0-84876915625.
    13. L.A. Fal’kovskii, Magnitooptika grafenovykh sloyov, Uspekhi fiz. nauk, 182(11), 1223–1228 (2012) [L.A. Falkovsky, Magnetooptics of graphene layers, Phys. Usp. 55(11), 1140–1145 (2012)], WoS: 000314808600012, Scopus: 2-s2.0-84873909734.
    14. L.A. Fal’kovskii, Kvantovaya magnitooptika i effekt Kerra na grafenovykh sloyakh, V sb: Nanofizika i nanoelektronika: Trudy XVI mezhdunarodnogo simpoziuma, 12–16 marta 2012 g., Nizhnii Novgorod. - Nizhnii Novgorod: IFM RAN, 2012, Tom 2, s.410-411.
    15. L.A. Falkovsky, Cyclotron resonance and Faraday rotation in graphite, Phys. Rev. B 83, 081107(R) (2011) [4 pages]; arXiv:1012.1965, WoS: 000287797000002, Scopus: 2-s2.0-79960973013.
    16. L.A. Falkovsky, Quantum magneto-optics of graphite with trigonal warping, Phys. Rev. B 84, 115414 (2011) [6 pages]; arXiv:1106.3401, WoS: 000294922400006, Scopus: 2-s2.0-80053585770.
    17. L.A. Fal’kovskii, Teoriya vozmushchenii dlya gamil’toniana, lineinogo po kvaziimpul’su, Pis’ma v ZhETF, 94 (9), 783-787 (2011) [L.A. Falkovsky, Perturbation theory for a hamiltonian linear in quasimomentum, JETP Lett., 94(9), 723-727 (2011)], WoS: 000300146100012, Scopus: 2-s2.0-84855536402.
    18. L.A. Fal’kovskii, Optika poluprovodnikov s lineinym elektronnym spektrom, Fizika nizkikh temp., 37 (6), 603-608 (2011) [L.A. Falkovsky, Optics of semiconductors with a linear electron spectrum, Low Temp. Phys., 37(6), 480-484 (2011)], WoS: 000293794700006, Scopus: 2-s2.0-80051556561.
    19. L.A. Fal’kovskii, Kvantovye ostsillyatsii v perestraivaemom grafenovom bisloe, Fizika nizkikh temp., 37 (9-10), 1022-1027 (2011) [L.A. Falkovsky, Quantum oscillations in a tunable graphene bilayer, Low Temp. Phys., 37(9-10), 815-818 (2011)], WoS: 000298642000017, Scopus: 2-s2.0-84855266975.
    20. L.A. Fal’kovskii, Universal’naya i anizotropnaya provodimost’ v grafenovom semeistve, V sb: Nanofizika i nanoelektronika: Trudy XV mezhdunarodnogo simpoziuma, 14–18 marta 2011 g., Nizhnii Novgorod. - Nizhnii Novgorod: IFM RAN, 2011, Tom 1, s. 113-113.
    21. L.A. Falkovsky, Universal infrared conductivity of graphite, Phys. Rev. B 82, 073103 (2010) [4 pages]; arXiv:1006.2648, Scopus: 2-s2.0-77957585993.
    22. L.A. Falkovsky, Gate-tunable bandgap in bilayer graphene, ZhETF, 137(2), 361-367 (2010) [JETP, 110(2), 319-324 (2010)]; arXiv:0908.3371, Scopus: 2-s2.0-77952029902.
    23. L.A. Falkovsky, Anisotropy of graphite optical conductivity, Pis’ma v ZhETF, 92 (5), 386-389 (2010) [JETP Lett., 92(5), 348-351 (2010)]; arXiv:1006.5190, Scopus: 2-s2.0-78549275460.
    24. L.A. Fal’kovskii, Optika poluprovodnikov s lineinym elektronnym spektrom, Trudy XIV Mezhd. simpoziuma “Nanofizika i nanoelektronika“ (15-19 marta 2010, Nizhnii Novgorod), t.1, s. 158-159 (2010).
    25. L.A. Falkovsky, Replay to «Comment on ‘Screening in gated bilayer graphene’», arXiv:1011.5559.
    26. L.A. Falkovsky, InN dielectric function from the midinfrared to the visible range, Phys. Rev. B 79, 113203 (2009) [4 pages]; arXiv:0901.1514.
    27. L.A. Falkovsky, Screening in gated bilayer graphene, Phys. Rev. B 80, 113413 (2009) [4 pages]; arXiv:0905.1765.
    28. L.A. Fal’kovskii, Osobennosti dielektricheskoi funktsii InN v oblasti pryamogo opticheskogo perekhoda, Pis’ma v ZhETF, 89 (5), 274-278 (2009) [L.A. Falkovsky, Singularities of the dielectric function of InN in the region of a direct optical transition, JETP Lett., 89(5), 233-237 (2009)].
    29. L.A. Falkovsky, Optical properties of graphene, J. Phys.: Conf. Ser., 129, 012004 (2008); arXiv:0806.3663.
    30. L.A. Falkovsky, Symmetry constraints on phonon dispersion in graphene, Phys. Lett. A 372(31), 5189-5192 (2008); arXiv:0802.0912.
    31. L.A. Falkovsky, Features of interband absorption in the dielectric function of narrow-gap semiconductors, Phys. Rev. B 77, 193201 (2008); arXiv:0802.2007.
    32. L.A. Fal’kovskii, Opticheskie svoistva dopirovannykh grafenovykh sloev, ZhETF, 133(3), 663-669 (2008) [L.A. Falkovsky, Optical properties of doped graphene layers, JETP 106(3), 575-580 (2008)].
    33. L.A. Fal’kovskii, Opticheskie svoistva grafena i poluprovodnikov tipa A4B6, Uspekhi fiz. nauk, 178 (9), 923-934 (2008) [L.A. Falkovsky, Optical properties of graphene and IV–VI semiconductors, Phys.-Usp. 51(9), 887-897 (2008)].
    34. L.A. Falkovsky, Optical properties of graphene, International Conference on Theoretical Physics, Dubna-Nano 2008 (July 7-11, 2008). Book of abstracts, p.28.
    35. L.A. Falkovsky, Phonon dispersion in graphene, J. Acoust. Soc. Am. 123(5,Pt.2), 3453 (2008).
    36. A.F. Andreev, A.I. Buzdin, A.A. Varlamov, Yu.Kh. Vekilov, L.P. Gor’kov, I.E. Dzyaloshinskii, Yu.M. Kagan, S.I. Mukhin, Yu.A. Osip’yan, L.P. Pitaevskii, S.M. Stishov, L.A. Fal’kovskii, Aleksei Alekseevich Abrikosov (k 80-letiyu so dnya rozhdeniya), Uspekhi fiz. nauk, 178 (6), 669-670 (2008) [A.F. Andreev, A.I. Buzdin, A.A. Varlamov, Yu.Kh. Vekilov, L.P. Gor’kov, I.E. Dzyaloshinskii, Yu.M. Kagan, S.I. Mukhin, Yu.A. Osip’yan, L.P. Pitaevskii, S.M. Stishov, L.A. Falkovsky, Aleksei Alekseevich Abrikosov (on his 80th birthday), Phys.-Usp., 51(6), 637-638 (2008)], WoS: 000260064600012.
    37. L.A. Falkovsky, A.A. Varlamov, Space-time dispersion of graphene conductivity, Eur. Phys. J. B 56 (4), 281-284 (2007); cond-mat/0606800.
    38. L.A. Falkovsky, Unusual field and temperature dependence of Hall effect in graphene, Phys. Rev. B 75, 033409 (2007) (4 pages); cond-mat/0611147.
    39. L.A. Falkovsky, S.S. Pershoguba, Optical far-infrared properties of graphene monolayer and multilayers, Phys. Rev. B 76, 153410 (2007) (4 pages); arXiv:0707.1386.
    40. L.A. Falkovsky, Phonon dispersion in graphene, ZhETF, 132(2), 446-452 (2007) [JETP, 105(2), 397-403 (2007)]; cond-mat/0702409.
    41. V.A. Benderskii, L.A. Falkovsky, E.I. Kats, Loschmidt echo and stochastic-like quantum dynamics of nano-particles, Pis’ma v ZhETF, 86 (3), 249-252 (2007) [JETP Letters, 86(3), 221-224 (2007)]; arXiv:0706.2333.
    42. S.N. Bagaev, V.V. Brazhkin, Yu.M. Kagan, L.V. Keldysh, Yu.A. Litvin, V.A. Matveev, S.V. Popova, V.N. Ryzhov, V.A. Somenkov, V.B. Timofeev, L.A. Fal’kovskii, Sergei Mikhailovich Stishov (k 70-letiyu so dnya rozhdeniya), Uspekhi fiz. nauk, 177(12), 1387-1388 (2007) [S.N. Bagaev, V.V. Brazhkin, Yu.M. Kagan, L.V. Keldysh, Yu.A. Litvin, V.A. Matveev, S.V. Popova, V.N. Ryzhov, V.A Somenkov, V.B. Timofeev, L.A. Falkovsky, PERSONALIA: Sergei Mikhailovich Stishov (on his 70th birthday), Phys.-Usp. 50(12), 1287-1288 (2007)].
    43. L.A. Falkovsky, Disorder effects on the Raman line shape in ZrO2, ZhETF, 129(1), 177-182 (2006) [JETP, 102(1), 155-159 (2006)]; cond-mat/0509534.
    44. L.A. Falkovsky, E.G. Mishchenko, Infrared absorption and Raman scattering on coupled plasmon-phonon modes in superlattices, ZhETF, 129(4), 751-760 (2006) [JETP, 102(4), 661-670 (2006)]; cond-mat/0510784.
    45. L.A. Fal’kovskii, E.Zh. Mishchenko, Fonon-plazmonnye svyazannye mody v getero-sverkhreshetkakh, Pis’ma v ZhETF, 82 (2), 103-107 (2005) [L.A. Falkovsky, E.G. Mishchenko, Phonon-plasmon coupled modes in hetero-superlattices, JETP Lett., 82(2), 96-100 (2005)].
    46. L.A. Falkovsky, Effect of Raman scattering by coupled phonon-plasmon modes in magnetic fields, Phys. Rev. B 70, 054301 (2004) [8 pages].
    47. L.A. Fal’kovskii, Fonon-plazmonnye mody v sil’nom magnitnom pole, Pis’ma v ZhETF, 79 (1), 50-53 (2004) [L.A. Falkovsky, Phonon-plasmon modes in a strong magnetic field, JETP Lett., 79 (1), 44-47 (2004)].
    48. L.A. Fal’kovskii, Ramanovskie issledovaniya poluprovodnikov s defektami, Uspekhi fiz. nauk, 174 (3), 259-283 (2004) [L.A. Falkovsky, Investigation of semiconductors with defects using Raman scattering, Phys. Usp. 47 (3), 249-272 (2004)].
    49. L.A. Falkovsky, Raman Scattering by Coupled Phonon-Plasmon Modes, Mater. Sci. Forum, Vol. 457-460 (Pt.1), 613-616 (2004) [Silicon Carbide and Related Materials 2003 (ICSCRM 2003): Proc. 10th Int. Conf., Lyon, France, October 5-10, 2003, Ed. by Roland Madar, Jean Camassel and Elisabeth Blanquet, 1548 pp in 2-Vol. set, ISBN 0-87849-943-1].
    50. L.A. Falkovsky, Raman scattering on phonon-plasmon coupled modes in magnetic fields, cond-mat/0403044.
    51. L.A. Fal’kovskii, Zatukhanie fonon-plazmonnykh mod, ZhETF, 123(2), 378-383 (2003) [L.A. Falkovsky, Damping of coupled phonon-plasmon modes, JETP, 96 (2), 335-339 (2003)]; cond-mat/0211040.
    52. L.A. Falkovsky, Electron-phonon interaction and coupled phonon-plasmon modes, ZhETF, 124(4), 886-897 (2003) [JETP, 97 (4), 794-805 (2003)]; cond-mat/0303503.
    53. L.A. Falkovsky, Effect of electron-phonon interaction on the shift and attenuation of optical phonons, Phys. Rev. B 66, 020302(R) (2002) [4 pages]; cond-mat/0203112.
    54. L.A. Fal’kovskii, Sdvig i zatukhanie opticheskikh fononov vsledstvie vzaimodeistviya s elektronami, ZhETF, 122(2), 411-418 (2002) [L.A. Falkovsky, Shift and damping of optical phonons caused by interaction with electrons, JETP, 95(2), 354-360 (2002)].
    55. A. Leycuras, O. Tottereau, P. Vicente, L.A. Falkovsky, P. Girard, J. Camassel, Full Si Wafer Conversion into Bulk 3C-SiC, Mater. Sci. Forum, Vol. 389-393 (Pt.1), 147-150 (2002) [Silicon Carbide and Related Materials 2001 (ICSCRM 2001): Proc. Int. Conf., Fall of 2001, Tsukuba, Japan, Ed. by S. Yoshida, S. Nishino, H. Harima and T. Kimoto, 1760 pp, 2-vol. set, ISBN 0-87849-894-X)].
    56. J. Camassel, L.A. Falkovsky, N. Planes, Strain effect in silicon-on-insulator materials: Investigation with optical phonons, Phys. Rev. B 63, 035309 (2001) [11 pages]; cond-mat/0009459.
    57. L.A. Falkovsky, Width of optical phonons: Influence of defects of various geometry, Phys. Rev. B 64, 024301 (2001) [6 pages].
    58. L.A. Falkovsky, Coulomb effects in dynamics of polar lattices, ZhETF, 119(5), 966-970 (2001) [JETP, 92(5), 840-843 (2001)]; cond-mat/0101050.
    59. H.W. Kunert, T.P. Maurice, T. Hauser, J.B. Malherbe, L.C. Prinsloo, D.J. Brink, L.A. Falkovsky, J. Camassel, Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC, Mater. Sci. Forum, Vol. 353-356, 275-278 (2001) [Silicon Carbide and Related Materials 2000: Proc. ECSCRM2000: 3rd European Conference, Kloster Banz, Germany, Sept. 3-7, 2000, Ed. by G. Pensl, D. Stephani and M. Hundhausen, 860 pp., ISBN 0-87849-873-7].
    60. J. Camassel, P. Vicente, L. Falkovski, Optical Characterization of SiC Materials: Bulk and Implanted Layers, Mater. Sci. Forum, Vol. 353-356, 335-340 (2001) [Silicon Carbide and Related Materials 2000: Proc. 3rd European Conference ECSCRM2000, Kloster Banz, Germany, Sept. 3-7, 2000. Ed. by G. Pensl, D. Stephani and M. Hundhausen, 860 pp., ISBN 0-87849-873-7].
    61. L.A. Falkovsky, Width of phonon states on defects of various dimensions, cond-mat/0101086.
    62. L.A. Falkovsky, J. Camassel, Disorder effect on optical phonons, Physica B 284-288 (Pt.2), 1145-1146 (2000).
    63. L.A. Fal’kovskii, Lokalizovannye sostoyaniya fononov u granitsy nepreryvnogo spektra, ZhETF, 117(4), 735-742 (2000) [L.A. Falkovsky, Localized phonon states at the edge of the continuous spectrum, JETP, 90 (4), 639-645 (2000)].
    64. L.A. Fal’kovskii, Rezonansnoe vzaimodeistvie fononov s lokalizovannymi sostoyaniyami, Pis’ma v ZhETF, 71 (4), 225-229 (2000) [L.A. Falkovsky, Resonance interaction of optical phonons with localized states, JETP Lett., 71 (4), 155-159 (2000)].
    65. N. Planes, H. Möller, J. Camassel, Y. Stoimenos, L. Falkovski, M. Eickhoff, G. Krötz, SOL thinning effects on 3C-SiC on SOI, Mater. Sci. Forum, Vol. 338-342, 301-304 (2000) [Silicon Carbide and Related Materials - 1999 (ICSCRM’99): Proc. Int. Conf., October 10-15, 1999, Research Triangle Park, North Carolina. Edited by: C.H. Carter,Jr., R.P. Devaty, and G.S. Rohrer, Trans Tech. Publ., 2000].
    66. L.A. Falkovsky, Interaction of optical phonons with anisotropic defects, Proc. 25th Int. Conf. on the Physics of Semiconductors (ICPS25), Osaka, Japan, September 17-22, 2000.
    67. J. Camassel, N. Planes, L. Falkovsky, H. Möller, M. Eickhoff, G. Krötz, SOL thickness dependence of residual strain in SOI material, Electron. Lett., 35(15), 1284-1286 (1999).
    68. L.A. Falkovsky, E.G. Mishchenko, Electron-lattice kinetics of metals heated by ultrashort laser pulses, ZhETF, 115(1), 149-157 (1999) [JETP, 88(1), 84-88 (1999)]; cond-mat/9902009.
    69. L.A. Fal’kovskii, J. Camassel, Sil’nye i slabye mody v politipakh SiC, Pis’ma v ZhETF, 69 (3), 247-250 (1999) [L.A. Fal’kovskii, J. Camassel, Strong and weak modes in polytypes of SiC, JETP Lett., 69 (3), 268-272 (1999)].
    70. J. Camassel, N. Planes, L. Falkovsky, H. Möller, M. Eickhoff, G. Krötz, Strain and Strain Relaxation in SOI Vaterials, Proc. V Int. Symposium on Semiconductor Wafer Bonding: Science, Technology and Applications, Oct. 1999, Honolulu, Hawaii, p.40-47. (Ed. by C.E. Hunt et al, Pennington, NJ : Electrochemical Society, 2001, x+480 pp. ISBN 1566772583).
    71. L.A. Falkovsky, J.M. Bluet, J. Camassel, Strain relaxation at the 3C-SiC/Si interface: Raman scattering experiments, Phys. Rev. B 57(18), 11283-11294 (1998).
    72. L.A. Falkovsky, W. Knap, J.C. Chervin, P. Wisniewski, Phonon modes and metal-insulator transition in GaN crystals under pressure, Phys. Rev. B 57(18), 11349-11355 (1998).
    73. J.M. Bluet, L.A. Falkovsky, N. Planes, J. Camassel, Raman Investigation of Stress Relaxation at the 3C-SiC/Si Interface, Mater. Sci. Forum, Vol. 264-268 (Pt.1), 395-398 (1998) [Silicon Carbide, III-Nitrides and Related Materials. Proc. 7th Int. Conf. ICSCIII-N'97, 31 Aug - 5 Sept 1997, Stockholm, Sweden. Edited by: G. Pensl, H. Morkoç, B. Monemar and E. Janzén. Trans Tech Publ., 1998].
    74. L.A. Falkovsky, Nonequilibrium electron-phonon systems, Proc. XXXI Low Temperature Conference, Moscow, December 2-3, 1998, p.126-127.
    75. L.A. Falkovsky, S. Klama, Fano resonance in a coupled electron-phonon system, Acta Physica Polonica A 91 (2), 347-350 (1997).
    76. J.M. Bluet, J. Camassel, L.A. Falkovsky, A. Leycuras, Optical investigation of thick 3C-SiC layers deposited on bulk silicon by CVD, Diamond and Related Materials, 6(10), 1385-1387 (1997).
    77. L.A. Falkovsky, J.M. Bluet, J. Camassel, Strain-fluctuation effect on Raman spectra, Phys. Rev. B 55(22), R14697-R14700 (1997).
    78. L.A. Falkovsky, S. Klama, Inelastic light scattering by electrons and plasmons in metals, ZhETF, 112(2), 679-689 (1997); Errata - ibid, 112(6), 2263 (1997) [JETP, 85(2), 370-375 (1997); Errata - ibid, 85(6), 1239 (1997)].
    79. L.A. Falkovsky, E.G. Mishchenko, Lattice deformation from interaction with electrons heated by an ultrashort laser pulse, Pis’ma v ZhETF, 66 (3), 195-199 (1997) [JETP Lett., 66 (3), 208-213 (1997)].
    80. L.A. Falkovsky, Interaction of optical phonons with anisotropic imperfections, Pis’ma v ZhETF, 66(12), 817-822 (1997) [JETP Lett., 66(12), 860-867 (1997)].
    81. L.A. Falkovsky, S. Klama, Fano resonance and surface effect in a coupled electron-phonon system, Czech. J. Phys., 46, Suppl. S2, 975-976 (1996).
    82. L.A. Falkovsky, S. Klama, Integral relations and symmetry group expansions for the Helmholtz equation, J. Phys. A 29(17), 5627-5635 (1996).
    83. L.A. Falkovsky, S. Klama, Fluctuations in coupled electron-phonon system and Raman light scattering, Physica C 264 (1-2), 1-10 (1996).
    84. S.I. Anisimov, S.A. Bulgadaev, G.E. Volovik, V.E. Zakharov, A.I. Larkin, V.P. Mineev, Yu.N. Ovchinnikov, Yu.A. Osip’yan, L.P. Pitaevskii, L.A. Fal’kovskii, I.M. Khalatnikov, Pamyati Vladimira Ivanovicha Mel’nikova, Uspekhi fiz. nauk, 166 (8), 915-916 (1996) [S.I. Anisimov, S.A. Bulgadaev, G.E. Volovik, V.E. Zakharov, A.I. Larkin, V.P. Mineev, Yu.N. Ovchinnikov, Yu.A. Osip’yan, L.P. Pitaevskii, L.A. Fal’kovskii, I.M. Khalatnikov, In memory of Vladimir Ivanovich Mel'nikov, Phys.-Usp. 39(8) 859-860 (1996)], WoS: A1996VH30900010.
    85. L.A. Falkovsky, S. Klama, Surface electronic fluctuations in metals, J. Magn. Magn. Mat., 140-144 (Pt.1), 677-678 (1995).
    86. L.A. Falkovsky, E.G. Mishchenko, Surface excitations in metals: Brillouin and Raman light scattering, Phys. Rev. B 51(11), 7239-7249 (1995).
    87. E.Zh. Mishchenko, L.A. Fal’kovskii, Dlinnovolnovye opticheskie fonony: zatukhanie, poverkhnostnye kolebaniya i ramanovskoe rasseyanie, ZhETF, 107 (3), 936-950 (1995) [E.Zh. Mishchenko, L.A. Fal’kovskii, Long-wavelength optical phonons: damping, surface oscillations, and Raman scattering, JETP, 80(3), 531-538 (1995)].
    88. L.A. Falkovsky, E.G. Mishchenko, Inelastic light scattering at metal-insulator transition: ripple and elasto-optic mechanisms, Pis’ma v ZhETF, 61 (8), 678-683 (1995) [JETP Lett., 61 (8), 699-705 (1995)].
    89. L.A. Fal’kovskii, Rezonans Fano v sisteme vzaimodeistvuyushchikh elektronov i fononov, Pis’ma v ZhETF, 62 (3), 227-230 (1995) [L.A. Fal’kovskiǐ, Fano resonance in a system of interacting electrons and phonons, JETP Lett., 62 (3), 242-246 (1995)].
    90. L.A. Falkovsky, S. Klama, Temperature-dependence of the electron Raman light-scattering in normal metals and superconductors, Acta Physica Polonica A 85 (2), 311-315 (1994).
    91. L.A. Falkovsky, S. Klama, Energy spectrum of edge states of a quantum dot in an external magnetic field, Phys. Lett. A 190 (3-4), 341-344 (1994).
    92. L.A. Falkovsky, S. Klama, Surface electronic fluctuations in metals and Raman light scattering, Phys. Rev. B 50 (8), 5666-5675 (1994).
    93. L.A. Falkovsky, S. Klama, Surface electronic fluctuations in metals and Raman light scattering, Physica C 235-240 (Pt.2), 1113-1114 (1994).
    94. L.A. Falkovsky, S. Klama, Surface electronic fluctuations in metals, Pis’ma v ZhETF, 59 (2), 127-132 (1994) [JETP Lett., 59 (2), 135-141 (1994)].
    95. L.A. Falkovsky, E.G. Mishchenko, Theory of electronic Brillouin scattering in metals, Pis’ma v ZhETF, 59(10), 687-692 (1994) [JETP Lett., 59(10), 726-732 (1994)].
    96. S. Klama, L.A. Fal’kovskii, O svyazi predstavlenii grupp 3-mernykh vrashchenii i vintovykh translyatsii dlya uravneniya Gel’mgol’tsa, Uspekhi mat. nauk, 49:4(298), 165–166 (1994); Errata — ibid, 49:6(300), 217 (1994) [S Klama, L.A. Fal’kovskii, On the connection between representations of groups of 3-dimensional rotations and helical translations for the Helmholtz equation, Russ. Math. Surv., 49(4), 163–164 (1994)].
    97. L.A. Falkovsky, S. Klama, Broadening of electron states in a quantum dot with a rough boundary in an external magnetic field, J. Phys.: Cond. Mat., 5(26), 4491-4504 (1993).
    98. L.A. Fal’kovskii, Elektronnoe neuprugoe rasseyanie sveta v sverkhprovodnike i normal’nom metalle s primesyami, ZhETF, 103 (2), 666-679 (1993) [L.A. Falkovsky, Inelastic electronic light scattering in superconducting and normal metals with impurities, JETP 76(2), 331-336 (1993)].
    99. S. Klyama, L.A. Fal’kovskii, Elektronnoe rasseyanie sveta v sverkhprovodnikakh pri konechnoi temperature, ZhETF, 100 (2), 625-634 (1991) [S. Klyama, L.A. Fal’kovskii, Scattering of light by electrons in superconductors at finite temperature, Sov. Phys. JETP 73(2), 346-351 (1991)].
    100. L.A. Fal’kovskii, Elektronnoe neuprugoe rasseyanie sveta v pogloshchayushchei srede, ZhETF, 100 (6), 2045-2052 (1991) [L.A. Fal’kovskii, Electronic inelastic scattering of light in an absorbing medium, Sov. Phys. JETP 73(6), 1134-1138 (1991)].
    101. L.K. Vodop’yanov, L.A. Fal’kovskii, S. Khimenis, S. Irvin, Kombinatsionnoe rasseyanie sveta v vyrozhdennom poluprovodnike (Pb, Sn)Se, Pis’ma v ZhETF, 53(11), 561-565 (1991) [L.K. Vodop’yanov, L.A. Fal’kovskii, J. Irvin, S. Himenis, Raman scattering of light in a degenerate (Pb, Sn) Se semiconductor, JETP Lett., 53(11), 586-590 (1991)].
    102. A.A. Abrikosov, L.A. Fal’kovskiĭ, Raman Scattering of Light by Electrons in Superconductors with a Small Correlation Lenght, NATO ASI Series, Ser. B: Physics, Vol. 264, 259-262 (1991) [Microscopic Aspects of Nonlinearity in Condensed Matter: Proc. NATO ARW, June 7-13, 1990, Florence, Italy. Bishop A.R., Pokrovsky V.L., Tognetti V. (eds), Springer, Boston, MA].
    103. A.A. Maksimov, I.I. Tartakovskii, L.A. Fal’kovskii, V.B. Timofeev, Electron light scattering in superconducting single crystals of Tl2Ba2CaCu2O8, Annals N.Y. Acad. Sci., 581, 37-43 (1990) [Frontiers in Condensed Matter Theory: Proceedings of a US-USSR Conference, , New York, USA, 2 Jul 1990].
    104. A.A. Abrikosov, L.A. Falkovsky, The normal state electron spectrum of CuO2 planes in HTSC, Physica C 168 (5-6), 556-564 (1990).
    105. L.A. Falkovsky, S. Klama, Electronic Raman light scattering in zero-gap anisotropic superconductors, Physica C 172 (3-4), 242-252 (1990).
    106. A.A. Maksimov, I.I. Tartakovskii, V.B. Timofeev, L.A. Fal’kovskii, Elektronnoe rasseyanie sveta v sverkhprovodyashchikh monokristallakh Tl2Ba2CaCu2O8, ZhETF, 97 (3), 1047-1059 (1990) [A.A. Maksimov, I.I. Tartakovskii, V.B. Timofeev, L.A. Fal’kovskii, Electron scattering of light in superconducting Tl2Ba2CaCu2O8 single crystals, Sov. Phys. JETP 70(3), 588-594 (1990)].
    107. L.A. Fal’kovskii, Elektronnoe rasseyanie sveta v sverkhprovodnikakh, Uspekhi fiz. nauk, 160 (4), 71-75 (1990) [L.A. Fal’kovskiĭ, Electron scattering of light in superconductors, Sov. Phys. Usp. 33(4), 296-298 (1990)].
    108. A.A. Maksimov, I.I. Tartakovskii, L.A. Fal’kovskiǐ, V.B. Timofeev, Electron light scattering in superconducting single crystals of Tl2Ba2CaCu2O8, AIP Conf. Proc., 213, 37-43 (1990).
    109. A.A. Abrikosov, L.A. Falkovsky, Raman light scattering by electrons in superconductors with a small correlation length, Physica Scripta, T27, 96-98 (1989).
    110. L.A. Fal’kovskii, Kombinatsionnoe rasseyanie sveta elektronami v metalle s primesyami, ZhETF, 95 (3), 1146-1151 (1989) [L.A. Fal’kovskii, Raman scattering of light by electrons in a metal with impurities, Sov. Phys. JETP 68(3), 661-663 (1989)].
    111. A.A. Abrikosov, L.A. Fal’kovskii, Elektronnyi spektr i dielektrizatsiya v oksidnykh sloyakh, Pis’ma v ZhETF, 49 (8), 463-465 (1989) [A.A. Abrikosov, L.A. Fal’kovskiǐ, Electron spectrum and insulator transition in oxide layers, JETP Lett., 49 (8), 531-535 (1989)].
    112. A.A. Abrikosov, L.A. Falkovsky, Electron spectrum and insulator transition in oxide layers, Proc. 5th Int. School on Condensed Matter Physics: Disordered Systems and New Materials, Varna, Bulgaria, 19 Sep 1988, pp.729-734. Edited by M. Borissov, N. Kirov, A. Vavrek. World Scientific, 1989, xiv+930 pp.
    113. A.A. Abrikosov, L.A. Falkovsky, Electronic Raman light scattering in superconductors with a short correlation length, Physica C 156 (1), 1-11 (1988).
    114. L.A. Falkovsky, S. Klama, Broadening of electron states in a thin film with a rough surface in an external longitudinal magnetic field, J. Phys. C 20(11), 1751-1764 (1987).
    115. L.A. Fal’kovskii, Gibridizatsiya s-, p- i d-sostoyanii v kvazikubicheskikh veshchestvakh, Pis’ma v ZhETF, 45 (6), 291-294 (1987) [L.A. Fal’kovskiǐ, Hybridization of s, p, and d states in quasicubic materials, JETP Lett., 45 (6), 366-369 (1987)].
    116. A.A. Abrikosov, L.A. Fal’kovskii, Ramanovskoe rasseyanie sveta elektronami v sverkhprovodnikakh s maloi korrelyatsionnoi dlinoi, Pis’ma v ZhETF, 46 (6), 236-238 (1987) [A.A. Abrikosov, L.A. Fal’kovskiǐ, Raman scattering of light by electrons in superconductors with a small correlation length, JETP Lett., 46 (6), 298-302 (1987)].
    117. L.A. Falkovsky, S. Klama, Electronic states of rough thin films in a magnetic field, Proc. VI Symposium "Physics of metals", Wroclaw, 1987, 46-47.
    118. L.A. Fal’kovskii, Proiskhozhdenie elektronnykh spektrov polumetallov V gruppy, Uspekhi fiz. nauk, 149 (2), 336-339 (1986) [L.A. Fal’kovskiĭ, The origin of electron spectra of group V semimetals, Sov. Phys. Usp. 29(6), 577-579 (1986)].
    119. L.A. Fal’kovskii, Osobennosti elektronnogo energeticheskogo spektra sur’my, Fizika tverd. tela, 28 (1), 270-272 (1986) [L.A. Fal’kovskii, Characteristic features of the electronic energy spectrum of antimony, Sov. Phys. Solid State 28(1), 146-147 (1986)].
    120. E.A. Dorofeev, L.A. Fal’kovskii, Elektronnaya struktura vismuta. Teoriya i eksperiment, ZhETF, 87 (6), 2202-2213 (1984) [A.E. Dorofeev, L.A. Fal’kovskii, Electron structure of bismuth. Theory and experiment, Sov. Phys. JETP, 60(6),1273-1279 (1984)].
    121. L.A. Falkovsky, Transport phenomena at metal surfaces, Adv. Physics, 32 (5), 753-789 (1983).
    122. B.A. Volkov, L.A. Fal’kovskii, Elektronnaya struktura polumetallov gruppy V, ZhETF, 85 (6), 2135-2151 (1983) [B.A. Volkov, L.A. Fal’kovskii, Electronic structure of group-V semimetals, Sov. Phys. JETP, 58(6), 1239-1248 (1983)].
    123. L.A. Fal’kovskii, Kineticheskie yavleniya u poverkhnosti metalla, Poverkhnost’: Fizika, khimiya, mekhanika, № 7, 13-25 (1982).
    124. L.A. Fal’kovskii, Vysokochastotnaya provodimost’ neideal’noi poverkhnosti v magnitnom pole, Fizika nizkikh temp., 8(11), 1167-1175 (1982) [L.A. Fal’kovskii, High-frequency electrical conductivity of a nonideal surface in a magnetic field, Sov. J. Low Temp. Phys. 8(11), 590-594 (1982)].
    125. L. Falkovsky, Theory of magnetic susceptibility of narrow gap semiconductors, Lect. Notes Phys., 152, 335-339 (1982) [Physics of Narrow Gap Semiconductors: Proc. 4th Int. Conf., Linz, Austria, 14-17 Sep. 1981. Ed. by E. Gornik, H. Heinrich, L. Palmetshofer. Springer, 1982, xi,485 pp. ISBN: 978-3-540-11191-7].
    126. L.A. Fal’kovskii, A.V. Brodovoi, G.V. Lashkarev, Magnitnaya vospriimchivost’ uzkoshchelevykh poluprovodnikov, ZhETF, 80 (1), 334-348 (1981) [L.A. Fal’kovskii, A.V. Brodovoi, G.V. Lashkarev, Magnetic susceptibility of narrow-gap semiconductors, Sov. Phys. JETP 53(1), 170-177 (1981)].
    127. L.A. Fal’kovskii, Anomal’nyi skin-effekt na sherokhovatoi poverkhnosti v magnitnom pole, ZhETF, 80 (2), 775-786 (1981) [L.A. Fal’kovskii, Anomalous skin effect on a rough surface in a magnetic field, Sov. Phys. JETP 53(2), 391-397 (1981)].
    128. L.A. Falkovsky, Theory of magnetic susceptibility of the narrow-gap semiconductors Pb(Sn)Te, Phys. Lett. A 78 (2), 172-174 (1980).
    129. E.I. Urazakov, L.A. Fal’kovskii, Anomal’noe prokhozhdenie zvuka cherez sherokhovatuyu poverkhnost’ tverdogo tela, ZhETF, 79 (1), 261-267 (1980) [E.I. Urazakov, L.A. Fal’kovskiǐ, Anomalous passage of sound through a rough surface of a solid, Sov. Phys. JETP 52(1), 132-135 (1980)].
    130. L.A. Falkovskii, Magnetic properties of narrow gap semiconductors, Lect. Notes Phys., 133, 266-281 (1980) [Narrow Gap Semiconductors, Physics and Applications. Proc. Int. Summer School on Narrow Gap Semiconductors, Physics and Applications. Nimes, France, 3-15 Sep 1979. Ed. by W. Zawadzki, Springer-Verlag, 1980, x+572 pp].
    131. L.A. Falkovsky, Conductivity of thin metal slabs with rough surfaces, J. Low Temp. Phys., 36 (5-6), 713-720 (1979); Erratum - ibid, 38(3-4), 535 (1980).
    132. L.A. Fal’kovskii, Granichnoe uslovie dlya funktsii raspredeleniya elektronov, vzaimodeistvuyushchikh s fononami, ZhETF, 76 (4), 1358-1368 (1979) [L.A. Fal’kovskiǐ, Boundary-condition for the distribution function of electrons interacting with phonons, Sov. Phys. JETP 49(4), 691-696 (1979)].
    133. E.I. Urazakov, L.A. Fal’kovskii, O vliyanii poverkhnostnykh voln na otrazhenie zvuka ot sherokhovatoi poverkhnosti, ZhETF, 77 (3), 1175-1182 (1979) [E.I. Urazakov, L.A. Fal’kovskiǐ, Effect of surface waves on the reflection of sound by a rough surface, Sov. Phys. JETP 50(3), 592-596 (1979)].
    134. E.I. Urazakov, L.A. Fal’kovskii, Lovescher zatukhanie uprugikh poverkhnostnykh voln na sherokhovatoi poverkhnosti, Izv. AN Kaz. SSR, ser. fiz.-mat, №5, 60-66 (1978).
    135. N.B. Brandt, M.V. Semenov, L.A. Falkovsky, Experiment and theory on the magnetic susceptibility of Bi-Sb alloys, J. Low Temp. Phys., 27 (1-2), 75-90 (1977).
    136. L.A. Fal’kovskii, O primesnykh sostoyaniyakh v veshchestvakh s uzkoi zapreshchennoi zonoi, ZhETF, 68 (4), 1529-1538 (1975) [L.A. Fal’kovskiǐ, Impurity states in substances with narrow energy gaps, Sov. Phys. JETP 41(4), 767-771 (1975)], WoS: A1975AD08900039.
    137. S.D. Beneslavskii, L.A. Fal’kovskii, Osobennosti magnitnoi vospriimchivosti polumetallov, ZhETF, 69 (3), 1063-1071 (1975) [S.D. Beneslavskiǐ, L.A. Fal’kovskiǐ, Features of the magnetic susceptibility of semimetals, Sov. Phys. JETP 42(3), 541-545 (1975)], WoS: A1975AT03500032.
    138. L.A. Fal’kovskii, O vliyanii magnitnogo polya na primesnye sostoyaniya v veshchestve s uzkoi zapreshchennoi zonoi, Fizika tverd. tela, 17(10), 2849-2856 (1975) [L.A. Fal’kovskii, Effect of magnetic field on impurity states in a narrow-gap semiconductor, Sov. Phys. Solid State 17(10), 1905-1908 (1976)], WoS: A1975AU49300001.
    139. L.A. Falkovsky, Theory of impurity states in Bi-Sb alloys, Proc. Int. Conference on Low Temperature Physics. Otaniemi, Finland, 14 Aug 1975, Vol.3, p.134-136. Ed. by M. Krusius, M. Vuorio, North-Holland, 1975, xiii+525 pp.
    140. S.D. Beneslavsky, L.A. Falkovsky, Theory of magnetic susceptibility of bismuth and its alloys with antimony, Preprint Landau ITP-19, 28.07.1975, 15pp.
    141. L.A. Fal’kovskii, O nekotorykh granichnykh zadachakh so sluchainoi poverkhnost’yu, Uspekhi mat. nauk, 29:3(177), 245–246 (1974).
    142. S.D. Beneslavskii, L.A. Fal’kovskii, Ob invertirovanii blizkikh zon magnitnym polem, Fizika tverd. tela, 16 (5), 1360-1368 (1974) [S.D. Beneslavskii, L.A. Fal’kovskii, Inversion of bands separated by a narrow gap in magnetic fields, Sov. Phys. - Solid State, 16(5), 876-881 (1974)].
    143. A.A. Abrikosov, L.A. Fal’kovskii, Sovremennaya monografiya po fizike tverdogo tela. Retsenziya na knigu: G.L. Vir, G.E. Pikus. Simmetriya i deformatsionnye effekty v poluprovodnikakh. M., «Nauka» (Gl. red. fiz-mat. lit.), 1972, 584 s., Uspekhi fiz. nauk, 113 (4), 740 (1974).
    144. L.A. Fal’kovskii, O soprotivlenii tonkikh metallicheskikh obraztsov, ZhETF, 64 (5), 1855-1860 (1973) [L.A. Fal’kovskiǐ, The resistance of thin metallic samples, Sov. Phys. JETP 37(5), 937-939 (1973)].
    145. E.I. Urazakov, L.A. Fal’kovskii, O rasprostranenii releevskoi volny po sherokhovatoi poverkhnosti, ZhETF, 63 (6), 2297-2303 (1972) [E.I. Urazakov, L.A. Fal’kovskiǐ, Propagation of a Rayleigh wave along a rough surface, Sov. Phys. JETP 36(6), 1214-1216 (1973)].
    146. A. Blank, L.A. Fal’kovskii, Zatukhanie magnitnykh poverkhnostnykh urovnei v sverkhprovodnike, ZhETF, 60 (2), 797-805 (1971) [A.Ya. Blank, L.A. Fal’kovskiǐ, Damping of magnetic surface levels in superconductors, Sov. Phys. JETP 33(2), 431-435 (1971)].
    147. L.A. Fal’kovskii, Skin-effekt na sherokhovatoi poverkhnosti, ZhETF, 60 (2), 838-845 (1971) [L.A. Fal’kovskiǐ, Skin effect on a rough surface, Sov. Phys. JETP 33(2), 454-457 (1971)].
    148. L.A. Fal’kovskii, Plotnost’ i zatukhanie poverkhnostnykh magnitnykh sostoyanii, ZhETF, 58 (5), 1830-1842 (1970) [L.A. Fal’kovskiǐ, Density Attenuation of Surface Magnetic States, Sov. Phys. JETP 31(5), 981-987 (1970)].
    149. L.A. Fal’kovskii, Vospriimchivost’ i teploemokst’ metallicheskoi plastiny, Pis’ma v ZhETF, 11 (3), 181-185 (1970) [L.A. Fal’kovskii, Susceptibility and Heat Capacity of a Metal Plate, JETP Lett., 11 (3), 111-114 (1970)].
    150. L.A. Fal’kovskii, Diffuznoe granichnoe uslovie dlya elektronov provodimosti, Pis’ma v ZhETF, 11 (4), 222-226 (1970) [L.A. Fal’kovskii, Diffuse Boundary Condition for Conduction Electrons, JETP Lett., 11 (4), 138-141 (1970)].
    151. V.F. Gantmakher, L.A. Fal’kovskii, V.S. Tsoi, Vliyanie magnitnykh poverkhnostnykh urovnei na impedans kaliya na radiochastotakh, Pis’ma v ZhETF, 9 (4), 246-249 (1969) [V.F. Gantmakher, L.A. Fal’kovskiǐ, V.S. Tsoi, Influence of Magnetic Surface Levels on the Impedance of Potassium at Radio Frequencies, JETP Lett, 9(4), 144-146 (1969)].
    152. L.A. Fal’kovskii, Fizicheskie svoistva vismuta, Uspekhi fiz. nauk, 94 (1), 3-41 (1968) [L.A. Fal’kovskiǐ, Physical Properties of Bismuth, Sov. Physics Uspekhi, 11(1), 1-21 (1968)].
    153. L.A. Fal’kovskii, O vliyanii deformatsii na elektronnyi spektr vismuta, ZhETF, 53(6), 2164-2167 (1967) [L.A. Fal’kovskiǐ, Effect of deformation on the electron spectrum of bismuth, Sov. Phys. JETP 26(6), 1222-1224 (1968)].
    154. L.A. Fal’kovskii, G.S. Razina, Elektrony i dyrki v vismute, ZhETF, 49(1), 265-274 (1965) [L.A. Fal’kovskiǐ, G.S. Razina, Electrons and Holes in Bismuth, Sov. Phys. JETP 22(1), 187-193 (1966)].
    155. L.A. Fal’kovskii, Kvaziklassicheskoe kvantovanie elektrona i dyrok v vismute v magnitnom pole, ZhETF, 49(2), 609-617 (1965) [L.A. Fal’kovskiǐ, Quasiclassical Quantization of Electrons and Holes in Bismuth in a Magnetic Field, Sov. Phys. JETP 22(2), 423-428 (1966)].
    156. L.A. Fal’kovskii, O rasprostranenii magnitoplazmennykh voln v plastine vismuta, ZhETF, 46 (5), 1820-1822 (1964) [L.A. Fal’kovskii, Propagation of magnetoplasma waves in a bismuth plate, Sov. Phys. JETP 19(5), 1226-1227 (1964)].
    157. L.A. Fal’kovskii, Teoriya elektronnykh spektrov metallov tipa vismuta v magnitnom pole, ZhETF, 44 (5?), 1935-1940 (1963); Errata — 45, 398 (1963) [L.A. Falkovskii, Theory of electron spectra of bismuth type metals in a magnetic field, Sov. Phys. JETP 17(6), 1302-1305 (1963)].
    158. M.S. Khaikin, L.A. Fal’kovskii, V.S. Edel’man, R.T. Mina, Svoistva magnitoplazmennykh voln v monokristallakh vismuta, ZhETF, 45(6), 1704-1716 (1963) [M.S. Khaikin, L.A. Fal’kovskii, V.S. Edel’man, R.T. Mina, Properties of magnetoplasma waves in bismuth single crystal, Sov. Phys. JETP 18(5), 1167-1175 (1964)].
    159. A.A. Abrikosov, L.A. Fal’kovskii, Teoriya elekronnogo energeticheskogo spektra metalla s reshetkoi vismuta, ZhETF, 43(3), 1089-1101 (1962) [A.A. Abrikosov, L.A. Falkovskiǐ, Theory of the Electron Energy Spectrum of Metals with a Bismuth Type Lattice, Sov. Phys. JETP 16(3), 769-777 (1963)].
    160. A.A. Abrikosov, L.A. Fal’kovskii, Kombinatsionnoe rasseyanie sveta s sverkhprovodnikakh, ZhETF, 40(1), 262-270 (1961) [A.A. Abrikosov, L.A. Fal’kovskii, Raman scattering if light in superconductors, Sov. Phys. JETP 13(1), 179-184 (1961)].