Russian Academy of Sciences

Landau Institute for Theoretical Physics

Evgeny A. Dorofeev

Ph. D.

Publications

    1. E.A. Dorofeev, S.I. Matveenko, Conductivity in a two-dimensional disordered model with anisotropic long-range hopping, ZhETF, 115(3),1093-1106 (1999) [JETP, 88(3), 603-609 (1999)]; cond-mat/9803200.
    2. E.A. Dorotheyev, G Rotundo, B Tirozzi, Energy landscape of neural networks storing spatially correlated patterns, J. Phys. A 28(13), 3733-3741 (1995).
    3. E.A. Dorotheyev, V.S. Dotsenko, B. Tirozzi, Statistical memory model for polymer chain shapes, Int. J. Mod. Phys. B 7(13), 2509-2527 (1993).
    4. E.A. Dorotheyev, S.I. Matveenko, Soliton-impurity interactions in the peierls model, Pis’ma v ZhETF, 58 (5), 373-376 [JETP Lett., 58 (5), 380-383 (1993)].
    5. E.A. Dorotheyev, Stability of the one-step replica-symmetry-broken phase in neural networks, J. Phys. A 25(21), 5527-5537 (1992).
    6. Vik.S. Dotsenko, N.D. Yarunin, E.A. Dorotheyev, Statistical mechanics of Hopfield-like neural networks with modified interactions, J. Phys. A 24(10), 2419-2429 (1991).
    7. E.A. Dorofeev, L.A. Fal’kovskii, Elektronnaya struktura vismuta. Teoriya i eksperiment, ZhETF, 87 (6), 2202-2213 (1984) [A.E. Dorofeev, L.A. Fal’kovskii, Electron structure of bismuth. Theory and experiment, Sov. Phys. JETP, 60(6),1273-1279 (1984)].
    8. E.A. Dorofeev, Dielektricheskaya pronitsaemost’ polumetallov V gruppy, Fizika tverd. tela, 26(12), 3576-3579 (1984) [E.A. Dorofeev, Permittivity of group V semimetals, Sov. Phys. Solid State 26(12), 2152-2154 (1984)].
    9. A.A. Abrikosov, E.A. Dorotheyev, The Peierls transition and electron localization by a random potential in a one-dimensional conductor, J. Low Temp. Phys., 46 (1-2), 53-69 (1982).
    10. A.A. Abrikosov, E.A. Dorofeev, Paierlsovskii perekhod i lokalizatsiya elektronov sluchainym potentsialom v odnomernom provodnike, Fizika tverd. tela, 24 (1), 293-295 (1982) [A.A. Abrikosov, E.A. Dorofeev, Peierls transition and localization of electrons by a random potential in a one-dimensional conductor, Sov. Phys. Solid State 24(1), 167-168 (1982)].